MS4603: Microelectronic Process Integration

Academic Units3
Semester2
Pre-requisite(s)Nil
Co-requisite(s)MS3012

Course Instructors

Professor Nripan MathewsProfessor Lee Pooi See

Course AIMS

The major objective of this subject is to introduce the students to the materials and engineering aspects of Silicon microelectronic device integration. Module technologies will be introduced, following by thin film processes used in device integration and  other processing module technologies. Successful completion of this subject should give the students an in-depth understanding of microelectronic device processing and integration, and help them to appreciate the materials design requirements of metal oxide semiconductor devices.  In addition, the students will be familiarized with the potential applications of semiconductor devices.

Intended Learning Outcomes

By the end of this course, you (as a student) would be able to:

  1. Identify and select suitable materials, deposition methods and integration processes based on materials properties and processing techniques.
  2. Explain the various integration processing modules and their applications for advanced semiconductor technology.
  3. Apply basic device and integration knowledge to solve processing and manufacturing issues.

Course Content

  • Advanced Gate Stack and Substrate Engineering
  • Contacts Formation and Source-Drain Metallization
  • Low K Dielectrics and Diffusion barriers

Reading and References

List of readings and references used in the course
Primary: C. Y. Chang and S. M. Sze, ULSI Technology, McGraw Hill 2001.
Secondary: Stanley Wolf, Silicon Processing for the VLSI Era: Vol 2: Process Integration,5th edition, Lattice Press.