Electronic Aspects of Oxygen Vacancy in Metal Oxides: X-ray Spectroscopic Investigation by Professor Deok-Yong Cho
Tan Chin Tuan Exchange Fellowship Lecture Hosted by Prof Lam Yeng Ming
Abstract
Scrutinizing the electronic structure of oxygen-deficient metal oxides has been a long-standing quest for electronic materials engineering. X-ray spectroscopy is one of the good options to characterize the oxygen-vacancy-influenced electronic structure in nanomaterials, for it is an element-specific probe having a nanometer-scale probing depth. However, it is always challenging to answer quantitatively how much the electronic structure (particularly near the Fermi level) changed per oxygen vacancy, because it is in principle impossible to measure the signals from the void (the oxygen vacancy). In this talk, I would like to share how we, negative-minded X-ray spectroscopists, manage to estimate the oxygen vacancy effects from the signals of the remaining atoms (either phenomenologically or being aided by first principle calculations, etc.) with cases of 3 representative X-ray spectroscopies; X-ray photoelectron spectroscopy (XPS) - a very often employed tool, X-ray absorption spectroscopy (XAS) – a bit rare tool, and lastly, resonant inelastic x-ray scattering (RIXS) – quite rare tool.
Biography
Deok-Yong Cho
Tan Chin Tuan Engineering Fellow at NTU
Professor, Department of Physics, Jeonbuk National University