Research Area

Our research is primarily dedicated to development of new nanoelectronic devices aimed at addressing the challenges posed by information technologies, with a special emphasis on high-speed telecommunications and high-performance computation.

Generation and manipulation of THz signals have challenged researchers for decades. At i–Lab, we develop new device technologies with unprecedented speeds, enabling operation in the THz band. Our innovative upstream solutions unleash vast technological potential within this crucial region of the electromagnetic spectrum.

Electronic Metadevices

Electronic metadevice is a new concept in which microscopic manipulation of radiofrequency fields results in extraordinary device properties. This approach can lead to a new generation of semiconductor devices that outperform their classical counterparts in terms of speed and energy efficiency. Electronic metadevices realized in form of switches on Galium Nitride have shown exceptional characteristics such as cutoff frequency of 18 THz and breakdown voltage of 30 V. 

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Nanoplasma picosecond switches

Electrical triggering of plasma in nanoscales (Nanoplasma) lead to an extremely fast switching, in range of a few picoseconds or below. Such devices are capable of providing current densities 1000x higher than semiconductors. Nanoplasma switches have enables ultrahigh switching speeds beyond 10 V/ps which is over 10x larger than the theoretical limit in semiconductor devices. Integration of Nanoplasma switches with resonators enabled generation of 50 W at frequencies beyond 100 GHz. 

References

Our brains store and process information using architectures and mechanisms drastically different from binary computers. In i–Lab we aim to mimic the behavior of neurons using intriguing electronic materials, which sets the stage for next generation of neuromorphic computers.

Neuron-like behaviors in Vanadium Dioxide

Vanadium Dioxide is a strongly correlated material which undergoes insulator-to-metal transition (IMT) close to room temperature. The energy required for this transition has shown strong dependence on the full memory of the previous transitions in the material. This is a new electronic functionality that can enable data stroge and processing. The effect is in particular interesting for brain-like computation. 

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